Power semiconductor modules are integrated modules formed by functional combination and encapsulation of high-power power electronic devices. The core components include power MOSFETs, IGBTs, and power integrated circuits. Standardized packaging is adopted to reduce the circuit volume. The main types include power modules, single-chip integrated modules, and hybrid integrated modules. Among them, intelligent power modules (IPM) integrate drive circuits, temperature sensors, and overcurrent protection functions [2] [4]. The modules are compatible with air-cooling or water-cooling heat dissipation systems. The super junction MOSFET plastic-sealed module has achieved liquid-cooled computing power server power supply production, covering manufacturers such as Delta and Great Wall Technology; the vehicle OBC plastic-sealed module is equipped with super junction MOSFETs, TGBTs, and SiCMOSFETs, and is applied in the power system of new energy vehicles [1] [8].
Power unit modules contain drive circuits, buffer circuits, and standard interfaces, and can be interconnected to form power electronic devices [3]. The basic unit module of IGBT consists of a single IGBT and a parallel-connected diode [2]. Some modules use lead frame technology to connect power switches and integrate rectifier bridges, inverter bridges, braking units, etc., forming a CIB topology structure [6-7]. The application fields include industrial frequency converters, new energy power generation equipment, electric drive systems for electric vehicles, and server power supplies. Zhixin Semiconductor has built a vehicle-grade IGBT module production line, with an annual output of 300,000 sets [8-9].