Power semiconductor devices mainly include power metal-oxide-semiconductor field-effect transistors (power mosfet, often abbreviated as power mos), insulated-gate bipolar transistors (igbt), and power integrated circuits (power ic, often abbreviated as pic). These devices or integrated circuits can operate at very high frequencies, and when the circuit operates at high frequencies, it can be more energy-efficient and resource-saving, and can significantly reduce the size and weight of the equipment. Especially the highly integrated single-chip on-chip power system (power system on a chip, abbreviated as psoc), which can integrate sensor devices with circuits, signal processing circuits, interface circuits, power devices, and circuits on a single silicon chip, making it have intelligent functions such as precisely adjusting the output according to the load requirements and self-protection according to overheat, overvoltage, and overcurrent situations. International experts compare its development to the second electronic revolution.